更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 210mΩ
- Id: 5.8A
相关文章
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 54.0mΩ,Id: 44A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 4.3mΩ,Id: 180A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.7mΩ,Id: 343A
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 1.1mΩ,Id: 260A
- 场效应晶体管,NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor