达林顿管

FZT689BTA

FZT689BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:20 V
Peak DC Collector Current:3 A
Minimum DC Current Gain:500@100mA@2V|400@2A@2V|150@6A@2V
Maximum Collector Emitter Saturation Voltage:0.1@0.5mA@0.1A|0.5@10mA@2A|0.45@20mA@3A V
Maximum Collector Base Voltage:20 V
Mounting:Surface Mount
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULN2003AIN

ULN2003AIN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULN2003AINSR

ULN2003AINSR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

TIP112G

TIP112G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BD678G

BD678G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULQ2003ATDQ1

ULQ2003ATDQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@0.25mA@0.1A|1.4@0.35mA@0.2A|1.7@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

NJVNJD35N04T4G

NJVNJD35N04T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:2000@2A@2V|300@4A@2V
Maximum Collector Emitter Saturation Voltage:1.5@20mA@2A V
Maximum Collector Base Voltage:700 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BCV48E6327

BCV48E6327

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.01mA@1V|4000@10mA@5V|10000@100mA@5V|2000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BD677

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

2N6426RLRAG

2N6426RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BC517_D74Z

BC517_D74Z

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BDV65BG

BDV65BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@0.02A@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

MPSA13

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA13内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-04 Tag标签:达林顿管

TIP126G

TIP126G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

MJH11020G

MJH11020G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:200 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:200 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管