达林顿管

2N6036G

2N6036G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@0.5A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

ULN2802A

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

SG2823J-883B

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:95 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:Yes
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

ULN2804AFWG,C,EL

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

MJ11015G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:30 A
Minimum DC Current Gain:200@30A@5V|1000@20A@5V
Maximum Collector Emitter Saturation Voltage:3@200mA@20A|4@300mA@30A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

MJE700G

MJE700G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

ZXTN04120HFFTA

ZXTN04120HFFTA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:3000@50mA@5V|3000@500mA@5V|3000@1A@5V|1000@2A@5V
Maximum Collector Emitter Saturation Voltage:0.9@0.25mA@250mA|1.5@1mA@1A|1.5@5mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

KSD1692

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    KSD1692内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-26 Tag标签:达林顿管

ULN2069B

ULN2069B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

KSH122TF

KSH122TF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

2N6427G

2N6427G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

BD680G

BD680G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

BUB323ZG

BUB323ZG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:500@5A@4.6V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@0.1A@8A|1.7@0.25A@10A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-07-26 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-26 Tag标签:达林顿管

CZT127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    CZT127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-07-26 Tag标签:达林顿管