达林顿管

ULN2003ANE4

ULN2003ANE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

KSD560YTU

KSD560YTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:5000@3A@2V
Maximum Collector Emitter Saturation Voltage:1.5@3mA@3A V
Maximum Collector Base Voltage:150 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

KSH127TF

KSH127TF

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

ULN2003AD

ULN2003AD

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

ZTX605STZ

ZTX605STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.25mA@250mA|1.5@1mA@1A V
Maximum Collector Base Voltage:140 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

BDW42G

BDW42G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

TIP125

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP125内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-06-10 Tag标签:达林顿管

TIP125

TIP125

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

2SD2212T100

2SD2212T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:70 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:70 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

ZTX614STZ

ZTX614STZ

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:5000@100mA@5V|10000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.25@8mA@800mA V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

TIP102TU

TIP102TU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

BDW93C-S

BDW93C-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

2N6426RLRAG

2N6426RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

TIP150-S

TIP150-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:300 V
Peak DC Collector Current:7 A
Minimum DC Current Gain:150@2.5A@5V|50@5A@5V|15@7A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@1A|1.5@100mA@2A|2@250mA@5A V
Maximum Collector Base Voltage:300 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管

TIP110G

TIP110G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-10 Tag标签:达林顿管