达林顿管

TIP125

TIP125

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

KSD1692YS

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:3 A
Minimum DC Current Gain:4000@1.5A@2V
Maximum Collector Emitter Saturation Voltage:1.2@1.5mA@1.5A V
Maximum Collector Base Voltage:150 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

2SD1509Q

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

SN75468NE4

SN75468NE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJD112-1G

MJD112-1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BDW47G

BDW47G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BC516,126

BC516,126

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.01mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

ULN2003APG,CN

ULN2003APG,CN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TD62783APG(O,S,HZN)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

FZT705TC

FZT705TC

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:3000@10mA@5V|3000@100mA@5V|3000@1A@5V|2000@2A@5V
Maximum Collector Emitter Saturation Voltage:1.3@1mA@1A|2.5@2mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MC1413BDG

MC1413BDG

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

ULQ2003ADR

ULQ2003ADR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@100mA|1.4@200mA|1.7@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BDV65BG

BDV65BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@0.02A@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BD681

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-05 Tag标签:达林顿管