达林顿管

FZT600TA

FZT600TA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:140 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@50mA@10V|2000@500mA@10V|1000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:160 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

BCV46E6327

BCV46E6327

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@500mA@5V|4000@10mA@5V|2000@100uA@1V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

BCV48E6327

BCV48E6327

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.01mA@1V|4000@10mA@5V|10000@100mA@5V|2000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

MJD112TF

MJD112TF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

ULN2004ANE4

ULN2004ANE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

ULN2803ADWR

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

BSP51,115

BSP51,115

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-12-21 Tag标签:达林顿管

ZXTN04120HP5TC

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V
Maximum Collector Emitter Saturation Voltage:1@0.25mA@250mA|1.5@1mA@1A V
Maximum Collector Base Voltage:140 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

TIP107

TIP107

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

NJVMJD44E3T4G

NJVMJD44E3T4G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@5V
Maximum Collector Emitter Saturation Voltage:1.5@10mA@5A V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

MJE700G

MJE700G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|2.8@40mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

2N6284G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

TN6725A

TN6725A

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1@2mA@200mA|1.5@2mA@1A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管

SN75468NE4

SN75468NE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-12-21 Tag标签:达林顿管