达林顿管

JANTX2N6058

JANTX2N6058

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@1A@3V|1000@6A@3V|150@12A@3V
Maximum Collector Emitter Saturation Voltage:3@120mA@12A|2@24mA@6A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

2SD2170T100

2SD2170T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:110 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:110 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULN2003ADRG4

ULN2003ADRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ESM3030DV

电气特性 Features

Configuration:Single Dual Emitter
Type:NPN
Maximum Collector Emitter Voltage:300 V
Peak DC Collector Current:100 A
Minimum DC Current Gain:300(Typ)@85A@5V
Maximum Collector Emitter Saturation Voltage:1.8@0.6A@60A|2.2@2.4A@85A V
Mounting:Screw
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULN2803ADWR

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

TIP107

TIP107

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

MC1413BDR2G

MC1413BDR2G

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

2SD1980TL

2SD1980TL

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BDX53BG

BDX53BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

BDX33CG

BDX33CG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

TIP120G

TIP120G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

FMMT634QTA

FMMT634QTA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.9 A
Maximum Collector Emitter Saturation Voltage:0.96@5mA@1A|0.75@1mA@100mA|0.8@1mA@250mA|0.85@5mA@500mA|0.93@5mA@900mA V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-04 Tag标签:达林顿管

MPSA13RLRMG

MPSA13RLRMG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管

ULN2065B

ULN2065B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-04 Tag标签:达林顿管