达林顿管

ULN2004ADG4

ULN2004ADG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

BSP62E6327

BSP62E6327

电气特性 Features

Configuration:Single Dual Collector
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A|1.3@0.55mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

MMSTA63-7-F

MMSTA63-7-F

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@100uA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

2SD2195T100

2SD2195T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

2N6287G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

MJ11015G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:30 A
Minimum DC Current Gain:200@30A@5V|1000@20A@5V
Maximum Collector Emitter Saturation Voltage:3@200mA@20A|4@300mA@30A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

ULQ2001D1013TR

ULQ2001D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

BDW94C

BDW94C

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

TD62783AFNG(O,S,EL)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

TIP126

TIP126

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

2SB1316TL

2SB1316TL

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-06-12 Tag标签:达林顿管

ULN2003ADG4

ULN2003ADG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

2SD2170T100

2SD2170T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:110 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:110 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管

TIP102

TIP102

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-06-12 Tag标签:达林顿管