达林顿管

NCV1413BDR2G

NCV1413BDR2G

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BDW47G

BDW47G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:250@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@50mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

SN75468DE4

SN75468DE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

FZT7053TA

FZT7053TA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:10000@100mA@5V|1000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULN2004ADRE4

ULN2004ADRE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BDV65BG

BDV65BG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V
Maximum Collector Emitter Saturation Voltage:2@0.02A@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BC516

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BC516内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-07-23 Tag标签:达林顿管

2SD2195T100

2SD2195T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

DS2003CMX/NOPB

DS2003CMX/NOPB

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BST52TA

BST52TA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BCV28,115

BCV28,115

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@1mA@5V|10000@10mA@5V|20000@100mA@5V|4000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BCV29E6327

BCV29E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@0.1mA@1V|10000@10mA@5V|20000@100mA@5V|4000@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULN2804A

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULQ2003AQDRQ1

ULQ2003AQDRQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.3@100mA|1.5@200mA|1.8@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

PZTA14

PZTA14

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管