达林顿管

TIP147G

TIP147G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MMBT6427LT1G

MMBT6427LT1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2065B

ULN2065B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIPL790A-S

TIPL790A-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:150 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:60@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1.2@20mA@4A|1.5@30mA@7A|2@50mA@10A V
Maximum Collector Base Voltage:200 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP131-S

TIP131-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|3@30mA@86A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BCV49,135

BCV49,135

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@1mA@5V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BC517_D74Z

BC517_D74Z

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1.2 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BCV46TA

BCV46TA

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULQ2003AN

ULQ2003AN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@100mA|1.4@200mA|1.7@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BDX43

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA|1.6@1mA@1A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ESM3030DV

电气特性 Features

Configuration:Single Dual Emitter
Type:NPN
Maximum Collector Emitter Voltage:300 V
Peak DC Collector Current:100 A
Minimum DC Current Gain:300(Typ)@85A@5V
Maximum Collector Emitter Saturation Voltage:1.8@0.6A@60A|2.2@2.4A@85A V
Mounting:Screw
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MPSA13RLRAG

MPSA13RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP127-S

TIP127-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管