达林顿管

2N6287G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

ULN2004AINSRG4

ULN2004AINSRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MPSA13RLRPG

MPSA13RLRPG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

2SD2170T100

2SD2170T100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:110 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@2V
Maximum Collector Emitter Saturation Voltage:1.5@1mA@1A V
Maximum Collector Base Voltage:110 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

KST14MTF

KST14MTF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TIPL790-S

TIPL790-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:60@0.5A@5V
Maximum Collector Emitter Saturation Voltage:1.2@20mA@4A|1.5@30mA@7A|2@50mA@10A V
Maximum Collector Base Voltage:150 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BSP51H6327XTSA1

BSP51H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.8@1mA@1A V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

KST13MTF

KST13MTF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJH11019G

MJH11019G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:200 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:200 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

NJVMJD112G

NJVMJD112G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:500@0.5A@3V|1000@2A@3V|200@4A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJD112

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD112内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MMBT6427-7-F

MMBT6427-7-F

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJH11022G

MJH11022G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:250 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:250 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJ11022G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:250 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V
Maximum Collector Emitter Saturation Voltage:2@100mA@10A|3.4@150mA@15A V
Maximum Collector Base Voltage:250 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

2SD1834T100

2SD1834T100

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:2000@500mA@3V
Maximum Collector Emitter Saturation Voltage:1.5@500uA@500mA V
Maximum Collector Base Voltage:60 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管