达林顿管

MPSA14

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA14内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BST62,115

BST62,115

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULQ2003D1013TRY

ULQ2003D1013TRY

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BD682STU

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

JANTX2N6058

JANTX2N6058

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@1A@3V|1000@6A@3V|150@12A@3V
Maximum Collector Emitter Saturation Voltage:3@120mA@12A|2@24mA@6A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ZXTN04120HFFTA

ZXTN04120HFFTA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:3000@50mA@5V|3000@500mA@5V|3000@1A@5V|1000@2A@5V
Maximum Collector Emitter Saturation Voltage:0.9@0.25mA@250mA|1.5@1mA@1A|1.5@5mA@2A V
Maximum Collector Base Voltage:140 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BU323ZG

BU323ZG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:350 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:150@6.5A@1.5V|500@5A@4.6V
Maximum Collector Emitter Saturation Voltage:1.6@70mA@7A|1.8@0.1A@8A|1.7@0.25A@10A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BDX34C

BDX34C

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2.5@6mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP142T

TIP142T

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MPSA13

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MPSA13内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

2N6287G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:20 A
Minimum DC Current Gain:100@20A@3V|750@10A@3V
Maximum Collector Emitter Saturation Voltage:2@40mA@10A|3@200mA@20A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BD677AS

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@2A@3V
Maximum Collector Emitter Saturation Voltage:2.8@40mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TD62083AFG(O,N,EL)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

2N6045G

2N6045G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@3A@4V
Maximum Collector Emitter Saturation Voltage:2@12mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BCV46E6327HTSA1

BCV46E6327HTSA1

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@500mA@5V|4000@10mA@5V|2000@100uA@1V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管