达林顿管

2N6045G

2N6045G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:100@8A@4V|1000@3A@4V
Maximum Collector Emitter Saturation Voltage:2@12mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MJD127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2003ADR

ULN2003ADR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP100G

TIP100G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2003AFWG(CNEHZA)

ULN2003AFWG(CNEHZA)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

PZTA29

PZTA29

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.8 A
Minimum DC Current Gain:10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.01mA@10mA|1.5@0.1mA@100mA V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MJD117

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD117内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULQ2001A

ULQ2001A

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BC516,126

BC516,126

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.01mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MPSA14RLRAG

MPSA14RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ZTX601B

ZTX601B

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:5000@50mA@10V|10000@500mA@10V|5000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULQ2004ATDRQ1

ULQ2004ATDRQ1

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@0.25mA@0.1A|1.3@0.35mA@0.2A|1.6@0.5mA@0.35A V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIPP115-R-S

TIPP115-R-S

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP120TU

TIP120TU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

SN75468N

SN75468N

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管