更新于 2026-07-22电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 16V
- RDS(on) Max@10V: 3.9mΩ
- Id: 190A
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- N沟道功率MOS管,Vbrdss: 150V,Vgs: 30V,RDS(on) Max@10V: 90.0mΩ,Id: 23A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 5.2mΩ,Id: 123A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 55.0mΩ,Id: 43A
电气特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |