达林顿管

MMBTA63LT1G

MMBTA63LT1G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:10000@100mA@5V|5000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TD62083AFNG(O,N,EL)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

DS2003CMX/NOPB

DS2003CMX/NOPB

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:55 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2003AIDRG4

ULN2003AIDRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2002ANE4

ULN2002ANE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BCV49,135

BCV49,135

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@1mA@5V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MJD112

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD112内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

ULN2068B

ULN2068B

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.75 A
Maximum Collector Emitter Saturation Voltage:1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP127FP

TIP127FP

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TIP122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-03-10 Tag标签:达林顿管

MJF6388G

MJF6388G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:100@10A@3V|1000@5A@3V|200@8A@4V|3000@3A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A|2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

TD62783AFWG(C,ELHA)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

KSH122TM

KSH122TM

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

2N6426RLRAG

2N6426RLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:40 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:20000@10mA@5V|30000@100mA@5V|20000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1.2@0.5mA@50mA|1.5@0.5mA@500mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管

BDX53C

BDX53C

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-03-10 Tag标签:达林顿管