更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 16V
- RDS(on) Max@10V: 185mΩ
- Id: 6.9A
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- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 1.8mΩ
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 3.8mΩ
- Id: 84A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 4.5mΩ,Id: 180A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 36.0mΩ,Id: 42A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |