达林顿管

ULN2004AD

ULN2004AD

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

BCV26/DG/B2,215

BCV26/DG/B2,215

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@1mA@5V|10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

ULN2003AIPW

ULN2003AIPW

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

ULN2003D1013TR

ULN2003D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

ULN2004ADG4

ULN2004ADG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

TIP105

TIP105

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:1000@3A@4V|200@8A@4V
Maximum Collector Emitter Saturation Voltage:2@6mA@3A|2.5@80mA@8A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

TD62083AFG(O,N)

电气特性 Features

Configuration:Octal
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

KST14MTF

KST14MTF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

CZT127

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    CZT127内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2025-09-18 Tag标签:达林顿管

BDX53B

BDX53B

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:8 A
Minimum DC Current Gain:750@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

SN75469N

SN75469N

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

SN75468DR

SN75468DR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:0.5 A
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

ULN2804AFWG,C,EL

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

ULN2003ADRG4

ULN2003ADRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管

TIP110G

TIP110G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2025-09-18 Tag标签:达林顿管