BC517G

BC517G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:30000@20mA@2V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Through Hole
Rad Hard:No

BA12003BF-E2

BA12003BF-E2

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No

2N6388G

2N6388G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No

TIP111

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    TIP111内部电路图

更多相似达林顿晶体管产品参数说明表

FZT689BTA

FZT689BTA

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:20 V
Peak DC Collector Current:3 A
Minimum DC Current Gain:500@100mA@2V|400@2A@2V|150@6A@2V
Maximum Collector Emitter Saturation Voltage:0.1@0.5mA@0.1A|0.5@10mA@2A|0.45@20mA@3A V
Maximum Collector Base Voltage:20 V
Mounting:Surface Mount

ULN2003AFWG(O,NEHZ)

ULN2003AFWG(O,NEHZ)

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:Surface Mount
Rad Hard:No

PZTA14H6327XTSA1

PZTA14H6327XTSA1

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@100mA@0.1mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

2STW100

2STW100

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:25 A
Minimum DC Current Gain:600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No

2N6038G

2N6038G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No

ULN2003BN

ULN2003BN

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Operating Temperature:-40 to 105 ℃
Mounting:Through Hole
Rad Hard:No

TIP142G

TIP142G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@4V|500@10A@4V
Maximum Collector Emitter Saturation Voltage:2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No

2N6387G

2N6387G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:10 A
Minimum DC Current Gain:1000@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@0.01A@5A|3@0.1A@10A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No

ULN2004ANE4

ULN2004ANE4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Through Hole
Rad Hard:No

MJD112TF

MJD112TF

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:200@4A@3V|500@500mA@3V|1000@2A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:100 V
Mounting:Surface Mount
Rad Hard:No

BCV29,115

BCV29,115

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:4000@1mA@5V|10000@10mA@5V|20000@100mA@5V|4000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:40 V
Mounting:Surface Mount
Rad Hard:No