首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 HGT1S10N120BNST HGT1S10N120BNST 更新于 2026-04-23 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:35 AMaximum Gate Emitter Voltage:±20 VMounting:Surface MountRad Hard:No