更新于 2025-06-11
电气特性 Features
- 绝缘栅双极型晶体管单管
- Trans IGBT Chip N-CH 1KV 60A
IHW30N100TFKSA1
相关文章
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 20A,Vce(ON)@25℃(typ): 2.05V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 15A,Vce(ON)@25℃(typ): 1.95V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 24A,Vce(ON)@25℃(typ): 1.60V
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 23 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 75 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |