更新于 2025-11-07
电气特性 Features
- 绝缘栅双极型晶体管单管
- Trans IGBT Chip N-CH 1KV 60A
IHW30N100TFKSA1
相关文章
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 20A,Vce(ON)@25℃(typ): 2.05V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 24A,Vce(ON)@25℃(typ): 1.60V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 390(Typ) V |
| Maximum Continuous Collector Current: | 25 A |
| Maximum Gate Emitter Voltage: | 16 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 35 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |