首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 IRGP6630DPBF IRGP6630DPBF 更新于 2025-06-12 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:47 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No