首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 NGTB15N135IHRWG NGTB15N135IHRWG 更新于 2025-08-02 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1350(Min) VMaximum Continuous Collector Current:30 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No