首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 FGB3440G2_F085 FGB3440G2_F085 更新于 2025-11-07 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:430 VMaximum Continuous Collector Current:26.9 AMaximum Gate Emitter Voltage:±10 VMounting:Surface MountOperating Temperature:-40 to 175 ℃Rad Hard:No