首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 HGTD1N120BNS9A HGTD1N120BNS9A 更新于 2025-11-07 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:5.3 AMaximum Gate Emitter Voltage:±20 VMounting:Surface MountRad Hard:No