首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 IHW50N65R5XKSA1 IHW50N65R5XKSA1 更新于 2025-06-11 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:650 VMaximum Continuous Collector Current:50 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No