更新于 2025-11-06电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.7V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 3.12V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Vce(ON)@25℃(typ): 3.37V
- 低导通压降(Vceon)IGBT模块,Vces: 600V,Ic@100℃: 30A,Vce(ON)@25℃(typ): 1.65V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 445 V |
| Maximum Continuous Collector Current: | 51 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 21 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |