更新于 2025-11-07电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 2.1V
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- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 16A,Vce(ON)@25℃(typ): 2.21V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 430 V |
| Maximum Continuous Collector Current: | 26.9 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 64 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |