电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.15V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 60 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 23 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 5.3 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 445 V |
Maximum Continuous Collector Current: | 51 A |
Maximum Gate Emitter Voltage: | ±10 V |
Mounting: | Surface Mount |
Rad Hard: | No |