电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 360V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.26V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 170 A |
Maximum Gate Emitter Voltage: | ±25 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 150 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1350(Min) V |
Maximum Continuous Collector Current: | 30 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 11 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |