更新于 2025-11-07电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 130A
- Vce(ON)@25℃(typ): 2.00V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 650V,Ic@100℃: 200A,Vce(ON)@25℃(typ): 1.60V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.7V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 45A,Vce(ON)@25℃(typ): 1.70V
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |