更新于 2025-06-11电气特性 Features
- DC-1kHz(标准)IGBT模块
- Vces: 430V
- Ic@100℃: 14A
- Vce(ON)@25℃(typ): 1.55V
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- DC-1kHz(标准)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.28V
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 34A,Vce(ON)@25℃(typ): 2.25V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1500 V |
| Maximum Continuous Collector Current: | 10 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 52 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |