更新于 2025-07-31电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 6.5A
- Vce(ON)@25℃(typ): 2.16V
相关文章
- 绝缘栅双极型晶体管单管,Trans IGBT Chip N-CH 600V 40A
- DC-1kHz(标准)IGBT模块,Vces: 600V,Ic@100℃: 13A,Vce(ON)@25℃(typ): 1.40V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.8V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 150 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 160 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |