更新于 2025-11-06电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 17A
- Vce(ON)@25℃(typ): 1.59V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.65V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 60A,Vce(ON)@25℃(typ): 1.67V
- DC-1kHz(标准)IGBT模块,Vces: 430V,Ic@100℃: 14A,Vce(ON)@25℃(typ): 1.55V
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 400 V |
| Maximum Gate Emitter Voltage: | ±4 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 49 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |