电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 900V
- Ic@100℃: 28A
- Vce(ON)@25℃(typ): 2.25V
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 330 V |
| Maximum Continuous Collector Current: | 180 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 6.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 370 V |
| Maximum Continuous Collector Current: | 21 A |
| Maximum Gate Emitter Voltage: | ±12 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 14 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |