电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 4.2A
- Vce(ON)@25℃(typ): 1.90V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 900 V |
Maximum Continuous Collector Current: | 51 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 14.7 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 430 V |
Maximum Continuous Collector Current: | 41 A |
Maximum Gate Emitter Voltage: | ±10 V |
Mounting: | Surface Mount |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 1200 V |
Maximum Continuous Collector Current: | 85 A |
Maximum Gate Emitter Voltage: | ±30 V |
Mounting: | Through Hole |
Rad Hard: | No |