IRGR3B60KD2PBF

IRGR3B60KD2PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:7.8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4BC20KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 9.0A
  • Vce(ON)@25℃(typ): 2.27V

IHW30N160R2FKSA1

IHW30N160R2FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IKD04N60RFATMA1

IKD04N60RFATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

STGW60H65FB

STGW60H65FB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGP50B60PD1-EP

IRGP50B60PD1-EP

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:75 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS4062DPBF

IRGS4062DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:48 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGC20B60KC

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.82V

STGW80H65DFB

STGW80H65DFB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:120 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

STGP10NC60KD

STGP10NC60KD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PC50FDPBF

IRG4PC50FDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS4610D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 1.70V

IGP20N65H5XKSA1

IGP20N65H5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

TIG065E8-TL-H

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:400 V
Maximum Gate Emitter Voltage:±4 V
Mounting:Surface Mount
Rad Hard:No

IRGC15B60KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.8V