IGP20N65H5XKSA1

IGP20N65H5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4BC40UPBF

IRG4BC40UPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKW25T120FKSA1

IKW25T120FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PSH73K10PBF

IRG7PSH73K10PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:220 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

NGTB15N120IHLWG

NGTB15N120IHLWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

GT30J322(Q)

GT30J322(Q)

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGH50T65UPD

FGH50T65UPD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

FGA30N120FTDTU

FGA30N120FTDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

STGD20N40LZ

STGD20N40LZ

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390(Typ) V
Maximum Continuous Collector Current:25 A
Maximum Gate Emitter Voltage:16 V
Mounting:Surface Mount
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGP4069PBF

IRGP4069PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:76 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP35B60PD-E

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 34A
  • Vce(ON)@25℃(typ): 2.25V

IRG4BC15UD-S

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.8A
  • Vce(ON)@25℃(typ): 2.02V

HGTG20N60B3

HGTG20N60B3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4069

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.60V

STGWT40H65FB

STGWT40H65FB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No