AUIRGR4045DTRL

AUIRGR4045DTRL

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGC4273B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 100A
  • Vce(ON)@25℃(typ): 1.60V

IRG7CH35UEF

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.90V

HGTD1N120BNS9A

HGTD1N120BNS9A

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:5.3 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4IBC30UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 8.9A
  • Vce(ON)@25℃(typ): 1.95V

SKW07N120

SKW07N120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:16.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IKW15T120FKSA1

IKW15T120FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4BC40KPBF

IRG4BC40KPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:42 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4CC30FB

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.59V

IRG4CC50FB

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.45V

IGW40N120H3FKSA1

IGW40N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGD20N40LZ

STGD20N40LZ

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390(Typ) V
Maximum Continuous Collector Current:25 A
Maximum Gate Emitter Voltage:16 V
Mounting:Surface Mount
Operating Temperature:-55 to 175 ℃
Rad Hard:No

HGTG40N60B3

HGTG40N60B3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PH30KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 3.10V

IRGP4068D-EPBF

IRGP4068D-EPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:96 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No