FGL60N100BNTD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1000 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole

IRGB4610DPBF

IRGB4610DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4PC50FD

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 39A
  • Vce(ON)@25℃(typ): 1.45V

IGP03N120H2

IGP03N120H2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:9.6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount

IRG4IBC10UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 3.9A
  • Vce(ON)@25℃(typ): 2.15V

IRGP50B60PD1-E

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 45A
  • Vce(ON)@25℃(typ): 2.00V

FGAF40N60UFTU

FGAF40N60UFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PH40K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 2.74V

TIG074E8-TL-H

电气特性 Features

Configuration:Single Quad Collector Triple Emitter
Channel Type:N
Maximum Collector Emitter Voltage:400 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±4 V
Mounting:Surface Mount
Operating Temperature:-40 to 150 ℃
Rad Hard:No

SKB04N60

SKB04N60

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:9.4 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount

IHW30N90TFKSA1

IHW30N90TFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGC35B60PB

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.85V

IRG4BC20KD-SPBF

IRG4BC20KD-SPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:16 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4BC15UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.8A
  • Vce(ON)@25℃(typ): 2.02V

IGA03N120H2XKSA1

IGA03N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No