IRG4IBC30UDPBF

IRG4IBC30UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:17 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGP30N65F5XKSA1

IGP30N65F5XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IKQ120N60TAXKSA1

IKQ120N60TAXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IGW30N60T

IGW30N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGPS4067DPBF

IRGPS4067DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:240 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4263

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.70V

IRG4PH50KDPBF

IRG4PH50KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PC30UDPBF

IRG4PC30UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:23 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4BC30FD1

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 17A
  • Vce(ON)@25℃(typ): 1.59V

IKW25N120T2FKSA1

IKW25N120T2FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGF6NC60HD

STGF6NC60HD

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PH50UPBF

IRG4PH50UPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:45 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

STGE50NC60VD

电气特性 Features

Configuration:Single Dual Emitter
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Screw
Rad Hard:No

IKB20N60H3ATMA1

IKB20N60H3ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount

IRGP35B60PD

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 34A
  • Vce(ON)@25℃(typ): 2.25V