更新于 2025-06-12电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
相关文章
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 16V,RDS(on) Max@10V: 56.0mΩ
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 3.3mΩ,Id: 210A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 23.0mΩ,Id: 57A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 13.8mΩ,Id: 43A
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5.5 V |
| Maximum Continuous Drain Current: | 305 mA |
| Maximum Gate Source Voltage: | -5 V |
| Maximum Drain Gate Voltage: | -5 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |