更新于 2025-06-10电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
相关文章
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 7.0mΩ,Id: 100A
- N沟道功率MOS管,Vbrdss: 20V,Vgs: 20V,RDS(on) Max@10V: 7.0mΩ
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 4.3mΩ,Id: 180A
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 30V,RDS(on) Max@10V: 32.0mΩ,Id: 60A
- N沟道功率MOS管,Vbrdss: 24V,Vgs: 20V,RDS(on) Max@10V: 1.5mΩ,Id: 353A