更新于 2025-06-11电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
相关文章
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 6.0mΩ,Id: 140A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 18.0mΩ,Id: 56A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 11.0mΩ,Id: 72A
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 30V,RDS(on) Max@10V: 15.0mΩ,Id: 105A
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 120 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | -5 to 1 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |