更新于 2025-06-12
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 2.7mΩ
IRF8252PBF-1
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电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Dual Common Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 65 V |
| Maximum Gate Source Voltage: | 11 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Screw |
| Rad Hard: | No |