更新于 2026-03-08电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 4.5mΩ
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 40.0mΩ,Id: 29A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 11.9mΩ
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 9mΩ,Id: 44A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.2mΩ
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | -35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |