更新于 2025-06-10电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 8.4mΩ
- Id: 60A
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- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 40.0mΩ,Id: 29A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.4mΩ,Id: 295A
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 9.4mΩ
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 150 V |
| Maximum Gate Source Voltage: | 3 V |
| Operating Temperature: | -65 to 250 ℃ |
| Mounting: | Screw |
| Rad Hard: | No |