更新于 2025-06-11电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 16V
- RDS(on) Max@10V: 8mΩ
- Id: 63A
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- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 8mΩ,Id: 68A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 40.0mΩ,Id: 29A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.2mΩ,Id: 170A
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |