电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 75.0mΩ
- Id: 4.0A
Configuration: | Single |
Channel Type: | N |
Maximum Drain Source Voltage: | 30 V |
Maximum Continuous Drain Current: | 10 mA |
Maximum Gate Source Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
Configuration: | Dual Common Source |
Channel Type: | N |
Maximum Drain Source Voltage: | 65 V |
Maximum Gate Source Voltage: | 11 V |
Operating Temperature: | -65 to 200 ℃ |
Mounting: | Screw |
Rad Hard: | No |