更新于 2026-06-05电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 16V
- RDS(on) Max@10V: 40.0mΩ
- Id: 28A
相关文章
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 39.0mΩ,Id: 31A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 16V,RDS(on) Max@10V: 2.4mΩ,Id: 100A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 12V
- 场效应晶体管,NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 14mΩ,Id: 45A