更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 12.0mΩ
- Id: 72A
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- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 36.0mΩ,Id: 39A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 105.0mΩ,Id: 18A
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 1.6mΩ,Id: 180A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 17.5mΩ,Id: 35A
电气特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | -25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |