达林顿管

BCP49E6327

BCP49E6327

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.1mA@1V|4000@10mA@5V|10000@100mA@5V|2000@500mA@5V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

2N6036G

2N6036G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:100@4A@3V|750@2A@3V|500@0.5A@3V
Maximum Collector Emitter Saturation Voltage:2@8mA@2A|3@40mA@4A V
Maximum Collector Base Voltage:80 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BCV47E6433

BCV47E6433

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULN2803APG(O,N,HZN)

电气特性 Features

Configuration:Octal Common Emitter
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BDW93CTU

BDW93CTU

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:12 A
Minimum DC Current Gain:1000@3A@3V|750@5A@3V|100@10A@3V
Maximum Collector Emitter Saturation Voltage:2@20mA@5A|3@100mA@10A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

MJD122

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MJD122内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ZTX601BSTOA

ZTX601BSTOA

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:160 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:5000@50mA@10V|10000@500mA@10V|5000@1A@10V
Maximum Collector Emitter Saturation Voltage:1.1@5mA@0.5A|1.2@10mA@1A V
Maximum Collector Base Voltage:180 V
Mounting:Through Hole
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULQ2003ADRG4

ULQ2003ADRG4

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.2@100mA|1.4@200mA|1.7@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULN2001D1013TR

ULN2001D1013TR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

TIP127

TIP127

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

MMBTA13LT3G

MMBTA13LT3G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

MJH11022G

MJH11022G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:250 V
Peak DC Collector Current:15 A
Minimum DC Current Gain:100@15A@5V|400@10A@5V
Maximum Collector Emitter Saturation Voltage:2.5@100mA@10A|4@150mA@15A V
Maximum Collector Base Voltage:250 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

TIP110

TIP110

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

BSP52T3G

BSP52T3G

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:80 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:90 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管

ULN2003ADR

ULN2003ADR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-07-23 Tag标签:达林顿管