首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 HGTG30N60C3D HGTG30N60C3D 更新于 2025-12-22 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:63 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No