更新于 2025-09-17电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.55V
相关文章
- 绝缘栅双极型晶体管单管,Trans IGBT Chip N-CH 600V 40A
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Vce(ON)@25℃(typ): 1.6V
- 绝缘栅双极型晶体管单管,Trans IGBT Chip N-CH 1.2KV 3.2A
- 超高速(8-30kHz)IGBT模块,Vces: 650V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 1.7V
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |