首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 FGD3N60UNDF FGD3N60UNDF 更新于 2025-08-01 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:6 AMaximum Gate Emitter Voltage:±20 VMounting:Surface MountOperating Temperature:-55 to 150 ℃Rad Hard:No