更新于 2025-11-07电气特性 Features
- DC-1kHz(标准)IGBT模块
- Vces: 600V
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- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 42A,Vce(ON)@25℃(typ): 2.00V
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Ic@100℃: 23A,Vce(ON)@25℃(typ): 2.05V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 50A,Vce(ON)@25℃(typ): 1.95V
电气特性 Features
电气特性 Features
| Configuration: | Single Dual Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 85 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 62 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |